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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795B DESCRIPTION With TO-220F package High breakdown voltage Fast switching speed Low collector saturation voltage APPLICATIONS For high voltalge ,high-speed switching applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 1300 600 8 6 3 UNIT V V V A A Open emitter Emitter-base voltage Collector current Base current Open collector Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 50 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A , L=25mH IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 600 2SC3795B SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 100 100 |I |I V V A A CHA IN E SEM NG OND IC TOR UC 8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3795B CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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